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江苏省先进碳材料与可穿戴能源技术重点实验室特邀学术报告

发布者:金霞发布时间:2019-04-08浏览次数:11

报告人巫江

报告题目:III-V Optoelectronic Devices Directly on Si Substrate

报告时间:2019410日下午3:00

报告地点:新能源大楼102

报告人简介:

巫江,国家青年特聘专家,四川省特聘专家,英国高等教育学会会士,IEEE高级会员,Nanoscale Research Letters主编,IEEE Access副编辑。2015-2018年间在伦敦大学学院担任讲师、博士生导师,2018年全职回国加盟电子科技大学基础与前沿研究院。主要从事化合物半导体纳米材料和基于量子结构光电器件设计与制备。近五年来,在Nature Photonics, Science Advances, Advanced MaterialsNano Letters等期刊上发表学术论文近100余篇。

报告摘要:

The ability to fabricate high-performance photonic devices, e.g. lasers, directly on silicon substrates would enable the long-pursuit efficient light sources for the silicon photonics.However, large material dissimilarity between III-V materials and silicon, especially polar versus nonpolar surfaces and lattice mismatch, makes the monolithic growth of III-Vs directly on silicon substrates highly challenging by introducing high-density antiphase boundaries and threading dislocations.Recently, III-V quantum dot devices have received much attention for integrated III-V/Si photonics due to their unique properties, in particular reduced sensitivity to defects and delta-function density of states.Here, recent advances in fabricating fabricating optoelectronic devices based on high-quality III-V heterostructures directly on silicon substrates are introduced.